Toshiba releases dual MOSFET with high ESD protection to drive headlight LED
Company to begin mass production of new MOSFET next month
Toshiba Electronic Devices & Storage Corporation, a subsidiary of Toshiba Group, has unveiled a dual MOSEFT (metal-oxide-semiconductor field-effect transistor), called “SSM6N813R”, for automotive applications, including as a driver IC for headlight LEDs, the company said in a press release on 23 March. The new MOSEFT is small in size, measuring 2.9 mm x 2.8 mm x 0.8 mm, and offers high electro-static discharge (ESD) protection and low drain-source on resistance RDS(ON). Toshiba plans to begin mass production of the new MOSEFT next month.
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