Toyoda Gosei develops vertical GaN power device with current operation of 100 Amperes
Company says its GaN power device doubles the electric current capacity from the previous 50 amperes to 100 amperes
Toyoda Gosei has developed a vertical Gallium nitride (GaN) power semiconductor device with high current operation of 100 amperes on a single chip, according to a press release on 23 May
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