Infineon to invest more than USD2.27 billion to setup new frontend fab facility in Malaysia
Investment helps the company strengthen its market leadership in power semiconductors business
Infineon Technologies is investing EUR2 billion (USD2.27 billion) in the field of wide bandgap silicon carbide and gallium nitride (SiC and GaN) semiconductors to build a third module at its site in Kulim, Malaysia, according to a press release by Infineon on 17 February.
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