NXP and TSMC to deliver first automotive 16-nanometer FinFET embedded MRAM
NXP’s next generation of S32 zonal processors and general purpose automotive microcontroller units are scheduled to be the first product to sample in early 2025
In a press release dated May 16, NXP Semiconductors announced its collaboration with TSMC to deliver the first automotive embedded magnetic random access memory (MRAM) in 16 nanometer (nm) fin field-effect transistor (FinFET) technology.
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