Toshiba enhances silicon carbide trench MOSFETs and Schottky barrier diodes for power conversion efficiency
Toshiba's new technology reduces on-resistance, improves UIS ruggedness, and boosts power devices in EVs and renewable energy
According to a press release on June 9, Toshiba Electronic Devices & Storage Corp. has developed new technology that enhances silicon carbide (SiC) trench metal-oxide-semiconductor field-effect transistor (MOSFETs) and SiC semisuper junction (SJ) Schottky barrier diodes (SBDs) by reducing on-resistance and improving UIS ruggedness.
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