In a press release on July 24, Onsemi announced an expansion of its collaboration with Schaeffler through a new design agreement that utilizes Onsemi's latest EliteSiC silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs). This collaboration will aid Schaeffler in powering a traction inverter for a major global automaker's new plug-in hybrid electric vehicle platform. The EliteSiC technology from Onsemi provides lower conduction losses and superior short-circuit robustness, resulting in a compact and thermally efficient inverter design that optimizes system performance. This silicon carbide-based solution delivers the lowest on-state resistance, offering the highest peak power among its class. It allows Schaeffler to produce an innovative system with advantages such as increased driving range, improved reliability and a flexible design.
As automakers focus more on energy efficiency and performance, the industry is shifting toward more advanced hybrid systems, even in cost-sensitive electric vehicle platforms traditionally reliant on insulated-gate bipolar transistors (IGBTs). Onsemi's expertise in silicon carbide technology positions it as a critical player in this shift, supporting Schaeffler in developing an EV system that meets stringent performance and packaging requirements. This initiative enhances the long-term collaboration between Onsemi and Schaeffler, underscoring their commitment to advancing high-efficiency electric mobility solutions.
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