X-FAB expands 180-nm XH018 process with new isolation class for enhanced single-photon avalanche diode integration
The ISOMOS1 module allows more efficient SPAD designs, improving integration and reducing chip area by 25%
As reported in a press release on June 19, X-FAB Silicon Foundries SE has introduced a new isolation class within its 180nm XH018 semiconductor process to enhance single-photon avalanche diode (SPAD) implementations. This new class supports more compact and efficient SPAD designs, enabling tighter integration, improved pixel density, and a higher fill factor, resulting in a reduced chip area.
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