Fraunhofer IAF develops GaN-based power electronics module for 800-V bidirectional charging system
Fraunhofer IAF and Ambibox unveil a compact GaN-based 800-V bidirectional EV charger prototype aimed at cutting costs and enabling vehicle-to-grid flexibility
Researchers at Germany’s Fraunhofer Institute for Applied Solid State Physics (IAF) have developed a gallium nitride (GaN)-based power electronics module for 800-volt bidirectional direct current (DC) charging, targeting electric vehicle applications.
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